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IPP35CN10N G  N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 35.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 27.0 A;
厂商： Infineon Technologies查看供应商
IPP50R399CP  N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 500.0 V; Package: TO-220; RDS(ON) @ TJ=25°C VGS=10: 399.0 mOhm; ID(max) @ TC=25°C: 9.0 A; IDpuls (max): 20.0 A;
厂商： Infineon Technologies查看供应商
IPP26CN10N G  N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 100.0 V; RDS (on) (max) (@10V): 26.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 35.0 A;
厂商： Infineon Technologies查看供应商
IPP80N04S3-06  Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 5.7 mOhm; ID (max): 80.0 A; RthJC (max): 1.5 K/W;
厂商： Infineon Technologies查看供应商
IPP070N06N G  N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 60.0 V; RDS (on) (max) (@10V): 7.0 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A;
厂商： Infineon Technologies查看供应商
IPP039N04L G  N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 40.0 V; RDS (on) (max) (@10V): 5.2 mOhm; RDS (on) (max) (@4.5V): 3.9 mOhm; ID (max): 80.0 A;
厂商： Infineon Technologies查看供应商
IPP100N04S3-03  Single: N-Channel 40V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 2.8 mOhm; ID (max): 100.0 A; RthJC (max): 0.7 K/W;
厂商： Infineon Technologies查看供应商
IPP041N04N G  N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 40.0 V; RDS (on) (max) (@10V): 4.1 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 80.0 A;
厂商： Infineon Technologies查看供应商
IPP065N03L G  N-Channel MOSFETs (20V - 250V); Package: PG-TO220-3; Package: TO-220; VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.5 mOhm; RDS (on) (max) (@4.5V): 9.5 mOhm; ID (max): 50.0 A;
厂商： Infineon Technologies查看供应商
IPP80N06S3-07  Single: N-Channel 55V MOSFETs; Package: PG-TO220-3; Technology: OptiMOS -T; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.8 mOhm; ID (max): 80.0 A; RthJC (max): 1.1 K/W;
厂商： Infineon Technologies查看供应商

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