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IPB80N03S4L-03  Single: N-Channel 30V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T2; VDS (max): 30.0 V; RDS (on) (max) (@10V): 3.3 mOhm; ID (max): 80.0 A; RthJC (max): 1.6 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2-08  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 7.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.7 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2L-H5  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.5 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2L-07  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.7 mOhm; ID (max): 80.0 A; RthJC (max): 0.7 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2-H5  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 5.2 mOhm; ID (max): 80.0 A; RthJC (max): 0.5 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2L-09  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 8.2 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2L-05  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.5 mOhm; ID (max): 80.0 A; RthJC (max): 0.5 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2-07  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 6.3 mOhm; ID (max): 80.0 A; RthJC (max): 0.6 K/W;
厂商： Infineon Technologies查看供应商
IPB80N06S2-05  Single: N-Channel 55V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 4.8 mOhm; ID (max): 80.0 A; RthJC (max): 0.5 K/W;
厂商： Infineon Technologies查看供应商
IPB80N04S3-03  Single: N-Channel 40V MOSFETs; Package: PG-TO263-3; Technology: OptiMOS -T; VDS (max): 40.0 V; RDS (on) (max) (@10V): 3.2 mOhm; ID (max): 80.0 A; RthJC (max): 0.8 K/W;
厂商： Infineon Technologies查看供应商

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